1 北京信息科技大学 光电信息与仪器北京市工程研究中心，北京 100016
2 北京信息科技大学 仪器科学与光电工程学院，北京 100016
3 华北光电技术研究所，北京 100015
双波段红外探测可对复杂的红外背景进行抑制，在军用目标识别、医疗诊断和污染监测等方面有重要应用价值。基于二类超晶格的双波段红外探测器在成本和性能方面具有很大的优势，成为新型红外探测器领域的研究热点。然而其暗电流和串扰会极大地影响双波段红外探测器的性能。因此，设计了nBn结构的InAs/GaSb超晶格中/长波双波段红外探测器，通过仿真比较不同结构的器件在不同偏压下的中波/长波通道的响应率和暗电流大小，分析势垒层厚度、吸收层厚度、不同区域的掺杂对暗电流和串扰的影响，从而得到最佳的模型参数达到减小暗电流和降低串扰的效果。仿真结果显示：nBn结构的中/长波双波段红外探测器在77 K下，中波通道的暗电流密度为4.5×10−5 A·cm−2，在0.3 V偏压下，2 µm处的峰值量子效率为64%，探测率可以达到3.9×1011 cm·Hz1/2·W−1；长波通道的暗电流密度为1.3×10−4 A·cm−2，在−0.3 V的偏压下，5.6 µm处的峰值量子效率为48%，探测率可以达到4.1×1011 cm·Hz1/2·W−1。相关结论可为器件设计和加工提供参考。
红外探测器 双波段 nBn InAs/GaSb超晶格 暗电流 infrared detector dual-band nBn InAs/GaSb superlattice dark current 红外与激光工程
2023, 52(9): 20220837
Author Affiliations
Abstract
1 School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
2 Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China
We systematically investigate the influence of growth interruption time on the properties of InAs/GaSb type-II superlattices (T2SLs) epitaxial materials grown by molecular beam epitaxy (MBE). X-ray diffraction (XRD) and atomic force microscope (AFM) are used to characterize the material quality and morphology. The full width at half maximum (FWHM) of the XRD 0th satellite peaks ranges from 32'' to 41'', and the root mean square (RMS) roughness on a 5 μm×5 μm scan area is 0.2 nm. Photoluminescence (PL) test is used to reveal the influence of the growth interruption time on the optical property. Grazing incidence X-ray reflectivity (GIXRR) measurements are performed to analyze the roughness of the interface. The interface roughness (0.24 nm) is optimal when the interruption time is 0.5 s. The crystal quality of T2SLs can be optimized with appropriate interruption time by MBE, which is a guide for the material epitaxy of high performance T2SL infrared detector.
光电子快报（英文版）
2023, 19(3): 155
1 北京信息科技大学 仪器科学与光电工程学院，北京 100096
2 光电测试技术及仪器教育部重点实验室，北京 100016
3 合肥工业大学 仪器科学与光电工程学院，安徽 合肥 230002
4 长春理工大学 光电工程学院，吉林 长春 130012
红外探测技术在卫星侦察、**制导、天文观测、医疗检测、现代通信等重要领域发挥着关键作用。II类超晶格（T2SLs）红外探测器作为继碲镉汞探测器之后的新一代红外探测材料，在稳定性、可制造性和成本等方面具有独特优势。势垒型InAs/InAsSb T2SLs红外探测器是最具潜力的T2SLs红外探测器之一，近年来其关键性能得到了稳步提高，但仍受吸收系数低、异质外延生长困难和暗电流大等因素的制约。文中综述了III-V族T2SLs的发展历程，分析了势垒型InAs/InAsSb T2SLs红外探测器的不同势垒结构、关键性能和发展趋势，指出了势垒型InAs/InAsSb T2SLs红外探测器需要解决的关键问题和未来发展方向。
红外探测器 T2SLs InAs/InAsSb 势垒结构 infrared detector Type-II superlattice InAs/InAsSb barrier structure 红外与激光工程
2022, 51(12): 20220667
Author Affiliations
Abstract
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Monoclinic gallium oxide (Ga2O3) has been grown on (0001) sapphire (Al2O3) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010]( ) β-Ga2O3||[ ](0001)Al2O3 via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω-rocking curve of ( ) plane and root mean square (RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C, respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair (DAP).
Journal of Semiconductors
2019, 40(1): 012802
